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| SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - DECEMBER 1995 PARMARKING DETAIL - MZ ZVN4106F S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate-Source Voltage Max Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot Tj :T stg VALUE 60 0.2 3 20 330 -55 to +150 UNIT V A A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 150 35 25 8 5 7 6 8 1 2.5 5 60 1.3 3 100 10 50 MAX. UNIT CONDITIONS. V V nA A A A mS pF pF pF ns ns ns ns V DD 25V, I D=150mA V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= 20V, V DS=0V V DS=60V, V GS=0 V DS=48V, V GS=0V, T=125C(2) V DS=25V, V GS=10V V GS=10V, I D=500mA V GS=5V, I D=200mA V DS=25V, I D=250mA Forward Transconductance(1)(2 g fs ) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) C iss C oss C rss T d(on) Tr T d(off) Tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 500 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 399 ZVN4106F 4 RDS(on) - Drain Source On Resistance () 100 VGS=3.5V 4V 5V 6V ID - Drain Current (A) VGS=20V 3 16V 14V 12V 2 10V 9V 8V 10 8V 10V 14V 20V 1 7V 6V 5V 4V 0 0 2 4 6 8 10 1 0.01 0.1 1 10 VDS - Drain Source Voltage (V) ID - Drain Current (A) Saturation Characteristics Normalised RDS(on) and VGS(th) 1.8 300 On-Resistance v Drain Current gfs - Transconductance (S) VDS=10V ID=0.5A RDS(on) 1.2 200 0.6 VGS(th) 100 0 -50 0 50 100 150 0 0 0.5 1.0 1.5 2.0 Tj - Junction Temperature ( C) ID(on) - Drain Current (A) Normalised RDS(on) & VGS(th) v Temperature VGS - Gate Source Voltage (V) 80 16 Transconductance v Drain Current ID=0.5A VDD=20V 40V 50V C - Capacitance (pF) 60 12 40 Ciss 8 20 Coss Crss 4 0 0 15 30 45 60 0 0 0.6 1.2 1.8 VDS - Drain Source Voltage (V) Q - Charge (nC) Capacitance v Drain Source Voltage Gate Source Voltage v Gate Charge 3 - 400 |
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